View TGA8061_348809.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Product Data Sheet
.1 - 3.5 GHz Low Noise Amplifier
TGA8061-SCC
Key Features and Performance
* * * * * * * 100 MHz to 3.5 GHz Frequency Range 3 dB Bandwidth Exceeds 5 Octaves 2.4 dB Noise Figure with Low Input and Output SWR 18 dB Gain 15 dBm Output Power at 1 dB Gain Compression Operates from Single 12V Supply 1.524 x 1.524 x 0.102 mm (0.060 x 0.060 x 0.004 in.)
Description
The TriQuint TGA8061-SCC is a GaAs monolithic low noise amplifier intended for use as a universal gain block in applications requiring simultaneous flat gain, low noise figure, and low SWR over a very wide bandwidth. Three FET stages with resistive feedback maintain highly repeatable linear phase and amplitude characteristics. The high isolation, low SWR, and unconditional stability of the TGA8061-SCC make it ideal for following or driving mixers and filters. Small size and low external parts count simplify system design and integration into higher-level assemblies. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as thermocompression and thermosonic wire bonding processes. Ground is provided to the circuit through vias to the backside metallization.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
1
Product Data Sheet TGA8061-SCC
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
2
Product Data Sheet TGA8061-SCC
ABSOLUTE MAXIMUM RATINGS
Positive supply voltage, V+.......................................................................................16 V 0 Bias control voltage range, V ADJ ................................................................................. V to 15 V Positive supply current, I+.........................................................................................200 mA 4.3 Pow er dissipation, PD, at (or below ) 25oC base-plate temperature *.................................... W Operating Channel temperature, TCH **........................................................................150oC 320 Mounting temperature (30 sec.), TM.............................................................................. oC -65 Storage temperature range, TSTG................................................................................. to 150oC Ratings over operating channel tem perature range, TCH (unless otherw ise noted). Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. * For operation above 25oC base-plate temperature, derate linearly at the rate of 9.1 mW/oC. ** Operating channel temperature directly affects the device MTTF. For maximum life, it is recommended that channel temperature be maintained at the low est possible level. These ratings apply to each individual FET.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
3
Product Data Sheet TGA8061-SCC
TYPICAL S-PARAMETERS
F re que nc y (GHz) M AG
S 11 ANG(o) M AG
S 21 ANG(o) M AG
S 12 ANG(o) M AG
S 22 ANG(o)
GAIN (dB )
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
0.40 0.26 0.22 0.21 0.21 0.21 0.19 0.19 0.19 0.18 0.18 0.17 0.17 0.16 0.16 0.16 0.16 0.16 0.16 0.17 0.18 0.18 0.19 0.21 0.22 0.23 0.25 0.26 0.27 0.28 0.29 0.30 0.31 0.32 0.32
-46 -44 -40 -36 -37 -41 -41 -41 -42 -42 -43 -44 -45 -46 -47 -49 -52 -58 -65 -71 -78 -83 -88 -91 -94 -96 -97 -97 -97 -97 -95 -94 -93 -91 -90
7.93 8.29 8.39 8.42 8.45 8.47 8.47 8.46 8.47 8.46 8.48 8.47 8.46 8.45 8.39 8.31 8.23 8.20 8.20 8.22 8.22 8.20 8.15 8.09 8.01 7.92 7.81 7.70 7.56 7.44 7.29 7.16 7.03 6.88 6.74
0 -1 -7 -12 -16 -20 -25 -29 -33 -37 -41 -45 -49 -53 -58 -62 -66 -69 -73 -77 -81 -86 -90 -95 -99 -104 -108 -12 -17 -121 -125 -129 -133 -137 -141
0.0001 0.0010 0.0011 0.0019 0.0024 0.0012 0.0003 0.0000 0.0006 0.0010 0.0010 0.0012 0.0014 0.0018 0.0019 0.0020 0.0020 0.0020 0.0020 0.0022 0.0027 0.0030 0.0029 0.0031 0.0032 0.0034 0.0033 0.0038 0.0040 0.0041 0.0041 0.0044 0.0044 0.0050 0.0048
49 77 74 54 0 -54 -14 64 107 107 98 111 101 105 102 108 105 104 108 108 105 107 106 107 107 111 109 105 107 104 107 109 107 106 109
0.29 0.29 0.29 0.29 0.29 0.30 0.30 0.30 0.30 0.30 0.30 0.30 0.29 0.29 0.29 0.29 0.28 0.28 0.28 0.28 0.28 0.28 0.28 0.29 0.30 0.30 0.32 0.32 0.34 0.35 0.36 0.37 0.38 0.39 0.39
-3 -4 -5 -7 -8 -10 -11 -13 -14 -15 -16 -17 -19 -20 -22 -24 -26 -28 -31 -34 -37 -41 -45 -48 -51 -55 -58 -60 -62 -64 -65 -66 -67 -67 -67
18.0 18.4 18.5 18.5 18.5 18.6 18.6 18.5 18.6 18.6 18.6 18.6 18.5 18.5 18.5 18.4 18.3 18.3 18.3 18.3 18.3 18.3 18.2 18.2 18.1 18.0 17.9 17.7 17.6 17.4 17.3 17.1 16.9 16.8 16.6
V+ = 12 V, VO = 5 V, TA = 25oC The reference plane for S-parameter data is located at the center of device bond pads. The S-parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
4
Product Data Sheet TGA8061-SCC
RF CHARACTERISTICS
P AR AM ETER TES T C ONDITIONS TYP UNIT
I P 3 Third-orde r inte rc e pt
P 1dB 1-dB ga in c ompre s s ion
1.0 2.0 3.5 0.1 1.0 2.0 3.0 4.0
GHz GHz GHz GHz GHz GHz GHz GHz
26 25 22 15 16 16 14 12
dBm
dBm
V+ = 12 V, VO = 5 V, TA = 25oC DC CHARACTERISTICS
P AR AMETER TEST C ONDITIONS TYP UNIT
I+
Pos itive s upply c urre nt
V+
= 12 V, V O = 5 V, T A =
25 o C
112
mA
TA = 25oC
EQUIVALENT SCHEMATIC
TYPICAL BIAS NETWORK
Select VADJ to set VO = 5 V+/- 0.5 V. Select resistor R1-R4 to set VD1 = 4.5 V +/- 0.5 V.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
5
Product Data Sheet TGA8061-SCC
RECOMMENDED ASSEMBLY DIAGRAM
Close placement of external components is essential to stability. VS1 connections: bond using three 1-mil diameter, 15 to 30-mil-length gold wires for optimum RF performance. The 100 pF capacitor should be placed within 15-mils of the chip, and source wires to this chip should be kept as short as possible.
RECOMMENDED TEST CONFIGURATION
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
6
Product Data Sheet TGA8061-SCC
MECHANICAL DRAWING
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
7

▲Up To Search▲

Price & Availability of TGA8061

	To Download TGA8061 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .